Part Number
|
IXFH22N55 |
Manufacturer
|
IXYS |
Description
|
HiPerFET Power MOSFET |
Published
|
May 21, 2005 |
Detailed Description
|
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR...
|
Datasheet
|
IXFH22N55
|
Overview
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFH 22 N55 VDSS
ID (cont) RDS(on) trr
= 550 V = 22 A = 0.
27 W £ 250 ns
Maximum Ratings 550 550 ±20 ±30 22 88 22 30 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V V V V A A A mJ V/ns W °C °C °C °C
TO-247 AD
D (TAB)
G = Gate, S = Source,
D...
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