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IXFH22N55

IXYS
Part Number IXFH22N55
Manufacturer IXYS
Description HiPerFET Power MOSFET
Published May 21, 2005
Detailed Description HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR...
Datasheet PDF File IXFH22N55 PDF File

IXFH22N55
IXFH22N55

Overview
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.
6 mm (0.
063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 22 N55 VDSS ID (cont) RDS(on) trr = 550 V = 22 A = 0.
27 W £ 250 ns Maximum Ratings 550 550 ±20 ±30 22 88 22 30 5 300 -55 .
.
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+150 150 -55 .
.
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+150 300 V V V V A A A mJ V/ns W °C °C °C °C TO-247 AD D (TAB) G = Gate, S = Source, D...


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