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Part Number
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BB601M |
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Manufacturer
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Hitachi |
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Description
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
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Published
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Jun 3, 2005 |
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Detailed Description
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BB601M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-702C (Z) 4th. Edition Nov. 1998 Features
• Build in...
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Datasheet
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BB601M
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Overview
BB601M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-702C (Z) 4th.
Edition Nov.
1998 Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.
5 dB typ.
at f = 900 MHz • Low noise; NF = 1.
85 dB typ.
at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143mod)
Outline
MPAK-4R
3 4 2 1
1.
Source 2.
Drain 3.
Gate2 4.
Gate1
Notes: 1.
Marking is “AT–”.
2.
BB601M is individual type number of HITACHI BBFET.
BB601M
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Dra...
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