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BB601M

Hitachi
Part Number BB601M
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C (Z) 4th. Edition Nov. 1998 Features • Build in...
Datasheet PDF File BB601M PDF File

BB601M
BB601M

Overview
BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-702C (Z) 4th.
Edition Nov.
1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.
5 dB typ.
at f = 900 MHz • Low noise; NF = 1.
85 dB typ.
at f = 900 MHz • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143mod) Outline MPAK-4R 3 4 2 1 1.
Source 2.
Drain 3.
Gate2 4.
Gate1 Notes: 1.
Marking is “AT–”.
2.
BB601M is individual type number of HITACHI BBFET.
BB601M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 +6 –0 20 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2...


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