2SJ680
TOSHIBA Field Effect
Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper
Regulator, DC/DC Converter and Motor Drive Applications
• Low drain-source ON-resistance: RDS (ON) = 1.
6 Ω (typ.
) • High forward transfer admittance: |Yfs| = 2.
0 S (typ.
) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement mode: Vth = −1.
5 to −3.
5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche curr...