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2SJ605

NEC
Part Number 2SJ605
Manufacturer NEC
Description MOS FIELD EFFECT TRANSISTOR
Published Jul 12, 2007
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605...
Datasheet PDF File 2SJ605 PDF File

2SJ605
2SJ605

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX.
(VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX.
(VGS = –4.
0 V, ID = –33 A) • Low input capacitance ! Ciss = 4600 pF TYP.
(VDS = –10 V, VGS = 0 A) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.
(TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) www.
DataSheet4U.
com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 m 20 m 65 m 200 V V A A W W °C °C A mJ (TO-262) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 100 1.
5 150 –55 to +150 –45 203 IAS EAS ! Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14650EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points.
© 2000 2SJ605 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD= –48 V VGS...


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