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SPB100N03S2-03

OptiMOS Power-Transistor

Description

SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rate...


Infineon Technologies

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