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SPB100N03S2-03

Infineon Technologies
Part Number SPB100N03S2-03
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Produc...
Datasheet PDF File SPB100N03S2-03 PDF File

SPB100N03S2-03
SPB100N03S2-03

Overview
www.
DataSheet4U.
com SPI100N03S2-03 SPP100N03S2-03,SPB100N03S2-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO263 -3-2 30 3 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance P- TO262 -3-1 • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP100N03S2-03 SPB100N03S2-03 SPI100N03S2-03 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4058 Q67042-S4057 Q67042-S4116 Marking PN0303 PN0303 PN0303 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55.
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+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°...


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