Microwave Power MMIC Amplifier
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.7dBm(MIN.) High Power Added Efficiency ηadd=21%(TYP.) n n TMD5872-2-321 High Gain G1dB=26.7dB(MIN.) Broadband Operation f=5.8-6.475GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE ...
Toshiba