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TMD5872-2-321

Toshiba
Part Number TMD5872-2-321
Manufacturer Toshiba
Description Microwave Power MMIC Amplifier
Published Jun 15, 2005
Detailed Description MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio appl...
Datasheet PDF File TMD5872-2-321 PDF File

TMD5872-2-321
TMD5872-2-321

Overview
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n n n Suitable for VSAT, UNII radio applications High Power P1dB=31.
7dBm(MIN.
) High Power Added Efficiency ηadd=21%(TYP.
) n n TMD5872-2-321 High Gain G1dB=26.
7dB(MIN.
) Broadband Operation f=5.
8-6.
475GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25 o C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dBm oC oC RATINGS 15 -10 10 -30 - +80 -65 - +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 o C) CHARACTERISTICS Operaing Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Gain Flatness Drain Current Power Added Efficiency VSWRin (small signal) ∆G IDD ηadd VSWRin dB A % 1.
2 21 2.
0:1 +/- 2.
0 1.
6 3.
0:1 G1dB SYMBOL f P1dB VDD=10V VGG=-5V dB 26.
7 CONDITION UNIT GHz dBm MIN.
5.
8 31.
7 TYP.
MAX.
6.
475 - u u The information contained herein is presented only as a guide for the applications of ...


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