|
Part Number
|
IRL530NS |
|
Manufacturer
|
IRF |
|
Description
|
HEXFET Power MOSFET |
|
Published
|
Jul 6, 2005 |
|
Detailed Description
|
PD - 91349C
IRL530NS/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile throug...
|
|
Datasheet
|
IRL530NS
|
Overview
PD - 91349C
IRL530NS/L
HEXFET® Power MOSFET
Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
D
VDSS =100V
G11 S
RDS(on) = 0.
10Ω ID = 17A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power pac...
Similar Datasheet