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IRL530N

Part Number	IRL530N
Manufacturer	IRF
Description	HEXFET Power MOSFET
Published	Jul 6, 2005
Detailed Description	PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operatin...
Datasheet	IRL530N PDF File

Overview

PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
10Ω G S ID = 17A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all comme...

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