:
SILICON
PNP EPITAXIAL TYPE (PCT PROCESS)
1
2SA130 2SA1306A
I2SA1306B
POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES .
High Transition Frequency : ff=100MHz (Typ.
) .
Complementary to 2SC3298, 2SC3298A, 2S C3298B
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SA1306 2SA1306A 2SA1306B
VcBO
Collector-Emitter Voltage
2SA1306 2SA1306A 2SA1306B
v CEO
Emitter-Base Voltage Collector Current
VeBO ic
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
Storage Temperature Range
IB PC T
J
T stg
RATING -160 -180 -200 -160 -180 -200
-5 -1.
5 -0.
15
20
150
-55-150
UNIT
V
V
V A A W °C °C
Unit in iTim
10.
3MAX.
7.
0 #3.
...