PD 91468C
IRG4PC50F
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
45V
@VGE = 15V, IC = 39A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C...