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IRG4PC50F-EPBF

International Rectifier
Part Number IRG4PC50F-EPBF
Manufacturer International Rectifier
Description Fast Speed IGBT
Published May 5, 2014
Detailed Description PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5...
Datasheet PDF File IRG4PC50F-EPBF PDF File

IRG4PC50F-EPBF
IRG4PC50F-EPBF


Overview
PD - 96168 IRG4PC50F-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AD package • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 70 39 280 280 ± 20 20 200 78 -55 to + 150 300 (0.
063 in.
(1.
6mm from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ.
––– 0.
24 ––– 6 (0.
21) Max.
0.
64 ––– 40 ––– Units °C/W g (oz) www.
irf.
com 1 08/06/08 http://www.
Datasheet4U.
com IRG4PC50F-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage „ 18 — ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 0.
62 — 1.
45 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.
79 — 1.
53 VGE(th) Gate Threshold Voltage 3.
0 — ∆VGE(th)/∆TJ Temperature Coeff.
of Threshold Voltage — -14 gfe Forward Tra...



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