PD 91469B
IRG4PC50FD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
45V
@VGE = 15V, IC = 39A
n-cha nn el
Benefits
• Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED di...