Ordering number : ENN7296 2SJ613 P-Channel Silicon MOSFET 2SJ613 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ613] 4.
5 1.
6 1.
5 Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
0.
5 3 1.
5 2 3.
0 1 1.
0 0.
4 2.
5 4.
25max 0.
4 (Bottom view) 0.
75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2×0.
8mm) Tc=25˚C Conditions Ratings -...

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