SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1004MB/D
The RF Line
Microwave Pulse Power
Transistors
Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.
0 Watts Peak Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation
MRF1004MB
4.
0 W, 960–1215 MHz MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
MAXIMUM RATINGS
Rat...