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MRF1004MB

Tyco
Part Number MRF1004MB
Manufacturer Tyco
Description MICROWAVE POWER TRANSISTORS
Published Aug 21, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1004MB/D The RF Line Microwave Pulse Power Transistors Designe...
Datasheet PDF File MRF1004MB PDF File

MRF1004MB
MRF1004MB

Overview
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1004MB/D The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.
0 Watts Peak Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Industry Standard Package • Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input Matching for Broadband Operation MRF1004MB 4.
0 W, 960–1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332A–03, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 20 50 3.
5 250 7.
0 40 –65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.
0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.
0 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 5.
0 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 1.
0 mAdc, IC = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 20 50 50 3.
5 — — — — — — — — — — 0.
5 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 75 mAdc, VCE = 5.
0 Vdc) hFE 10 — 100 — NOTES: (continued) 1.
These devices are designed for RF operation.
The total device dissipation rating applies only when the device is operated as RF amplifiers.
2.
Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 8 1 ELECTRICAL CHARACTERIS...


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