STD12N05 STD12N06
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR
TYPE STD12N05 STD12N06
s s s s s s s s
V DSS 50 V 60 V
R DS( on) 0.
15 Ω 0.
15 Ω
ID 12 A 12 A
s
s
TYPICAL RDS(on) = 0.
1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
3 1
IPAK TO-251 (Suffix ”-1”)
2
1
DPAK TO-252
3
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s...