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STD12N60M2

STMicroelectronics
Part Number STD12N60M2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 24, 2019
Detailed Description STD12N60M2 Datasheet N-channel 600 V, 0.395 Ω typ., 9 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB...
Datasheet PDF File STD12N60M2 PDF File

STD12N60M2
STD12N60M2

Overview
STD12N60M2 Datasheet N-channel 600 V, 0.
395 Ω typ.
, 9 A MDmesh M2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM15572v1_tab Features Order code VDS RDS(on) max.
ID STD12N60M2 600 V 0.
450 Ω 9A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STD12N60M2 Product summary Order code STD12N60M2 Marking 12N60M2 Package DPAK Packing Tape and reel DS10854 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 9 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V 3.
VDS ≤ 480 V Table 2.
Thermal data Symbol RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance junction-to-ambient 1.
When mounted on FR-4 board of 1 inch², 2 oz Cu Parameter Table 3.
Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) STD12N60M2 Electrical ratings Value ± 25 9 5.
7 36 85 15 50 Unit V A A A W V/ns V/ns - 55 to 150 °C V...


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