STP80N05-09
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS
TRANSISTOR
TYPE STP80N05-09
s s s s s s
VDS S 50 V
RDS(o n) 0.
009 Ω
ID 80 A
ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE
1 2
3
APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTER ABSOLUTE MAXIMUM RATINGS
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR V GS ID ID I DM (•) Pt ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Vol tage (R GS = 20 kΩ ) Gate-s ource Voltage Drain Current (conti nuous) at Tc = 25 C Drain Current (co...