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STP80N05-09

ST Microelectronics
Part Number STP80N05-09
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
Published Aug 31, 2005
Detailed Description STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 5...
Datasheet PDF File STP80N05-09 PDF File

STP80N05-09
STP80N05-09

Overview
STP80N05-09 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE STP80N05-09 s s s s s s VDS S 50 V RDS(o n) < 0.
009 Ω ID 80 A ULTRA HIGH DENSITY TECHNOLOGY TYPICAL RDS(on) = 7 mΩ AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE 1 2 3 APPLICATIONS s SYNCROUNOUS RECTIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s DC-DC & DC-AC CONVERTER ABSOLUTE MAXIMUM RATINGS TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR V GS ID ID I DM (•) Pt ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Vol tage (R GS = 20 kΩ ) Gate-s ource Voltage Drain Current (conti nuous) at Tc = 25 C Drain Current (co...


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