MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BSS63LT1/D
High Voltage
Transistor
PNP Silicon
1 BASE
COLLECTOR 3
BSS63LT1
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Emitter Voltage RBE = 10 kΩ Collector Current — Continuous Symbol VCEO VCER –110 IC –100 Value –100
2 EMITTER
1
3
Unit Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225...