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BSS63LT1

Part Number	BSS63LT1
Manufacturer	Motorola
Description	PNP Transistor
Published	Sep 5, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS63LT1/D High Voltage Transistor PNP Silicon 1 BASE C...
Datasheet	BSS63LT1 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BSS63LT1/D High Voltage Transistor PNP Silicon 1 BASE COLLECTOR 3 BSS63LT1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage RBE = 10 kΩ Collector Current — Continuous Symbol VCEO VCER –110 IC –100 Value –100 2 EMITTER 1 3 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225...

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