MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
TMOS E-FET.
™ Power Field Effect
Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOSāā™ā) N–Channel Enhancement–Mode Silicon Gate
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching
regulators, converters, solenoid and relay drivers.
This Logic Level Series part is specified to operate with level logic gate–to–source voltage of 5 volt and 4 volt.
• Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.
028 Ω max • Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode • Specially Designed Leadframe ...