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MTB50N06V

ON Semiconductor
Part Number MTB50N06V
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 15, 2016
Detailed Description MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand hig...
Datasheet PDF File MTB50N06V PDF File

MTB50N06V
MTB50N06V

Overview
MTB50N06V Preferred Device Power MOSFET 42 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) Drain Current − Continuous @ 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) VDSS VDGR VGS VGSM ID ID IDM PD 60 Vdc 60 Vdc ± 20 ± 25 42 30 147 125 0.
83 3.
0 Vdc Vpk Adc Apk Watts W/°C Watts Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.
454 μH, RG = 25 Ω) EAS 400 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) RθJC RθJA RθJA °C/W 1.
2 62.
5 50 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 sec TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
When surface mounted to an FR4 board using the minimum recommended pad size.
http://onsemi.
com 42 AMPERES 60 VOLTS RDS(on) = 28 mΩ N−Channel D G 12 3 S 4 D2PAK CASE 418B STYLE 2 MARKING DI...


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