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RF MOSFET Power
Transistor, IOOW, 28V 100 - 500 MHz
Features
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UF281 OOV
v2.
00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower
&lode Device Operation
for Broadband
High Saturated Output Power
Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current ( Symbol V DS V GS ‘DS 1 Rating 65 20 12 250 200 -55 to +150 0.
7 ( Units
V V
A
Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance
PD
TJ T sic 8 IP
W
“C “C “crw
Electrical _____.
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Parameter Drain-Source Drain-Source Gate-Source
Characteristics at 25°C...