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UF28100M

Tyco Electronics
Part Number UF28100M
Manufacturer Tyco Electronics
Description RF MOSFET Power Transistor
Published Sep 14, 2005
Detailed Description an AMP company RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broa...
Datasheet PDF File UF28100M PDF File

UF28100M
UF28100M

Overview
an AMP company RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.
7 W “C “C “Ciw PD T, T STG El JO I4 II P &w 505 m t.
74 a&b, a¶ .
m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25°C ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions 1 Drain-Source Breakdown Voltage BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.
5 C RSS % 65 3.
0 3.
0 V mA pA V S pF pF pF dB % dB - Drain-Source LeakageCurrent Gate-Source Leakage Current I V,,=O.
O V, I,,=150 v,,=2a.
o v,,=20 V,,=lO.
O V,,=lO.
O v,=2a.
o V,s=28.
0 mA’ v.
vo,=o.
o v v, v,,=o.
o V’ mA‘ mA, ~v,,=l .
O V, 80 ps Pulse’ Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance * Per Side Specifications 2.
0 1.
5 6.
0 135 90 24 V, 1,,=300.
0 V, 1,,=3000.
0 v, F=l .
o MHz’ V, F=l .
O MHz’ v,,=2a.
ov, F=I .
OMHZ* V,,=28.
0 -v,,=%.
O V,,=28.
0 v,,=28.
0 V, 1,,=600.
0 V, 1,,=600.
0 V, 1,,=600.
0 V.
1,,=600.
0 mA, P,,=lOO.
O mA, P,,=lOO.
O W.
F=500 MHz W, F=500 MHz I 10 50 10 3O:l mA, PO,,=1 00.
0 W, F=500 MHz mA, P,,,.
=100.
0 W, F=500 MHz VSWR-T - Subject to Change Without Notice.
M/A-COM, inc.
RF MOSFET Power Transistor, IOOW, 28V UF281OOM v2.
00 Typical Broadband Performance Curves EFFICIENCY P,=lO W I,,=600 vs FREQUENCY mA (Push-Pull POWER OUTPUT vs SUPPLY VOLTAGE P,,,=lO W I,,=600 mA F=500 MHz loo 80.
Device) 80 60 20 t 100 200 300 400 so0 14 16 20 24 28 32 FREQUENCY (MHz) SUPPLY VOLTAGE (V) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) s e i3 5 fs 0 80 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Withou...


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