TECHNICAL DATA
PNP LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N5415
200 200
2N5416
300 350
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
6.
0 1.
0 0.
75 10 -65 to +200 Max.
17.
5
TO- 5*
2N5415, 2N5416
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.
28 mW/0C for TA +250C 2) Derate linearly 57.
1 mW/0C for TC +...