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JAN2N5416

Microsemi Corporation
Part Number JAN2N5416
Manufacturer Microsemi Corporation
Description (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR
Published Sep 23, 2005
Detailed Description TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qu...
Datasheet PDF File JAN2N5416 PDF File

JAN2N5416
JAN2N5416

Overview
TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N5415 200 200 2N5416 300 350 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 6.
0 1.
0 0.
75 10 -65 to +200 Max.
17.
5 TO- 5* 2N5415, 2N5416 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.
28 mW/0C for TA > +250C 2) Derate linearly 57.
1 mW/0C for TC > +250C 0 2N5415S, 2N5416S TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min.
Max.
Unit OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-B...


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