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SI7909DN

Dual P-Channel 12-V (D-S) MOSFET

Description

Si7909DN New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.037 @ VGS = –4.5 V –12 0.048 @ VGS = –2.5 V 0.068 @ VGS = –1.8 V ID (A) –7.7 –6.8 –5.7 FEATURES • TrenchFET® Power MOSFETS: 1.8-V Rated • New Low Thermal Resistance PowerPAK® Package • Advanced High Cell Density Process • Ultra-Low rDS(on), and Hi...


Vishay Siliconix

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