TPCS8104
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCS8104
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.
1 mΩ (typ.
) High forward transfer admittance: |Yfs| = 23 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −...