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TPCS8105

Toshiba Semiconductor
Part Number TPCS8105
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 16, 2015
Detailed Description TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Application...
Datasheet PDF File TPCS8105 PDF File

TPCS8105
TPCS8105

Overview
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.
6 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 23 S (typ.
) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 1,2,3 4 5,6,7,8 Source Gate Drain Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −10 −40 1.
1 0.
6 26 −10 0.
11 150 −55 to 150 Unit V V V A W W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.
035 g (typ.
) Circuit Configuration 8765 1234 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-16 Thermal Characteristics Characteristics Symbol Max Unit T...


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