Part Number
|
IXTA180N055T |
Manufacturer
|
IXYS Corporation |
Description
|
(IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET |
Published
|
Sep 27, 2005 |
Detailed Description
|
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180...
|
Datasheet
|
IXTA180N055T
|
Overview
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55 V = 180 A = 4.
0 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.
0 3 360 -55 .
.
.
+175 175 -55 .
.
.
+150 A A A A
G (TAB) G D S (TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
J V/ns W °C °C °C °C °C
G = Gate S = Source
D S
TO-263 (IXTA)
G
S (TAB) D =...
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