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IXTA180N055T

IXYS Corporation
Part Number IXTA180N055T
Manufacturer IXYS Corporation
Description (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
Published Sep 27, 2005
Detailed Description Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180...
Datasheet PDF File IXTA180N055T PDF File

IXTA180N055T
IXTA180N055T

Overview
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.
0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.
0 3 360 -55 .
.
.
+175 175 -55 .
.
.
+150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C J V/ns W °C °C °C °C °C G = Gate S = Source D S TO-263 (IXTA) G S (TAB) D =...


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