Part Number
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DE475-102N21A |
Manufacturer
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IXYS Corporation |
Description
|
RF Power MOSFET |
Published
|
Sep 28, 2005 |
Detailed Description
|
DE475-102N21A
RF Power MOSFET
♦ ♦ ♦ ♦ ♦
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz ...
|
Datasheet
|
DE475-102N21A
|
Overview
DE475-102N21A
RF Power MOSFET
♦ ♦ ♦ ♦ ♦
N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0
VDSS ID25
Maximum Ratings 1000 1000 ±20 ±30 24 144 21 30 5 200 1800 V V V V A A A mJ V/ns V/ns W W W C/W C/W
SG1 SG2 GATE
= = = =
1000 V 24 A 0.
41 Ω 1800W
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol
RDS(on) PDC
DRAIN
Tc = 25°C Derate 4.
0W/°C above 25°C Tc = 25°C
730 4.
5 0.
08 0.
20
SD1
SD...
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