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DE475-102N21A

Part Number	DE475-102N21A
Manufacturer	IXYS Corporation
Description	RF Power MOSFET
Published	Sep 28, 2005
Detailed Description	DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz ...
Datasheet	DE475-102N21A PDF File

Overview

DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 Maximum Ratings 1000 1000 ±20 ±30 24 144 21 30 5 >200 1800 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = = 1000 V 24 A 0.
41 Ω 1800W Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol RDS(on) PDC DRAIN Tc = 25°C Derate 4.
0W/°C above 25°C Tc = 25°C 730 4.
5 0.
08 0.
20 SD1 SD...

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DE475-102N21A RF Power MOSFET - IXYS Corporation

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