Part Number
|
MP6759 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon N-Channel IGBT |
Published
|
Sep 29, 2005 |
Detailed Description
|
MP6759
TOSHIBA GTR Module Silicon N Channel IGBT
MP6759
Motor Control Applications High Power Switching Applications
Un...
|
Datasheet
|
MP6759
|
Overview
MP6759
TOSHIBA GTR Module Silicon N Channel IGBT
MP6759
Motor Control Applications High Power Switching Applications
Unit: mm
· · · · ·
The electrodes are isolated from case.
6 IGBTs are built into 1 package.
Enhancement-mode Low saturation voltage : VCE (sat) = 2.
7 V (max) (IC = 10 A) High speed: tf = 0.
35 µs (max) (IC = 10 A)
JEDEC JEITA TOSHIBA
― ― 2-78A1A
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ―
Weight: 44 g (typ.
)
Rating 600 ±20 10 20 10 20 40 150 −40 to 125 2500 (AC 1 minute) 1.
5
Unit V V A
Forward current
A
Collector power dissipation (Tc = ...
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