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MP6757

Toshiba Semiconductor
Part Number MP6757
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Sep 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The elec...
Datasheet PDF File MP6757 PDF File

MP6757
MP6757

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MP6757 High Power Switching Applications Motor Control Applications · The electrodes are isolated from case.
· 6 IGBTs are 6 free wheeling diodes are built into 1 package.
· Enhancement-mode · High speed : tf = 0.
35 µs (max) (IC = 25 A) : trr = 0.
15 µs (max) (IF = 25 A) MP6757 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 44 g (typ.
) Rati...


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