Part Number
|
HY5DU281622ET |
Manufacturer
|
Hynix Semiconductor |
Description
|
128M(8Mx16) GDDR SDRAM |
Published
|
Oct 1, 2005 |
Detailed Description
|
HY5DU281622ET
128M(8Mx16) GDDR SDRAM
HY5DU281622ET
This document is a general product description and is subject to ch...
|
Datasheet
|
HY5DU281622ET
|
Overview
HY5DU281622ET
128M(8Mx16) GDDR SDRAM
HY5DU281622ET
This document is a general product description and is subject to change without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
5 / Jan.
2005 1
HY5DU281622ET
Revision History
Revision No.
0.
1 0.
2 0.
3 0.
4 0.
5 Defined target spec.
1) Insert Overshoot/Undershoot Specification 2) Insert tDSS/tDSH Parameter tPDEX value Change tRC_APCG changed to 12 clock from 11 clock at 166Mhz speed bin 166Mhz speed bin delete, AC parameter change (tRC_APCG at 200Mhz) History Draft Date July 2003 Oct.
2003 Mar.
2004 Oct.
2004 Jan.
2005 Remark
Rev.
0.
5 / Jan.
2005
2
HY5DU281...
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