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HY5DU281622ET

Part Number	HY5DU281622ET
Manufacturer	Hynix Semiconductor
Description	128M(8Mx16) GDDR SDRAM
Published	Oct 1, 2005
Detailed Description	HY5DU281622ET 128M(8Mx16) GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to ch...
Datasheet	HY5DU281622ET PDF File

Overview

...ange without notice.
Hynix Electronics does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev.
0.
5 / Jan.
2005 1 HY5DU281622ET Revision History Revision No.
0.
1 0.
2 0.
3 0.
4 0.
5 Defined target spec.
1) Insert Overshoot/Undershoot Specification 2) Insert tDSS/tDSH Parameter tPDEX value Change tRC_APCG changed to 12 clock from 11 clock at 166Mhz speed bin 166Mhz speed bin delete, AC parameter change (tRC_APCG at 200Mhz) History Draft Date July 2003 Oct.
2003 Mar.
2004 Oct.
2004 Jan.
2005 Remark Rev.
0.
5 / Jan.
2005 2 HY5DU281622ET DESCRIPTION The Hynix HY5DU281622ET is a 134,217,728-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suit...

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