Dual N-CHANNEL POWER MOSFET FEATURES ! Extremely Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Rugged Polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ ▼ S1 ,S2 N-Channel MOSFET Absolute Maximum Ratings Symbol VDSS VDGR VGS ID ID IDM PD TJ , TSTG TL Notes ; (1) TJ= 25℃ to 150℃ (2) Repetitive Rating : Pulse Width Limited by Max.
Junction Temperature Characteristic Drain-to-Source Voltage(1) Drain-Gate Voltage(RGS=1.
0MΩ)(1) Gate-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Curren...

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