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SSD2009A

Fairchild Semiconductor
Part Number SSD2009A
Manufacturer Fairchild Semiconductor
Description Dual N-CHANNEL POWER MOSFET
Published Oct 4, 2005
Detailed Description Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input ...
Datasheet PDF File SSD2009A PDF File

SSD2009A
SSD2009A

Overview
Dual N-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2009A 8 SOIC S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View D1,D2 D1,D2 ▼ Product Summary Part Number SSD2009 BVDSS 50V RDS(on) 0.
13Ω ID 3.
0A S1 ,S2 N -Channel MOSFET Absolute Maximum Ratings Symbol VDSS ID IDM VGS PD TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TA=25℃ Continuous Drain Current TA=70℃ Drain Current-Pulsed Gate-to-Source Voltage Total Power Dissipation ( TA=25℃ ) ( TA=70℃ ) Operating and Junction Storage Temperature Range ① Value 50 3.
0 2.
3 10.
0 ±20 2.
0 1.
3 - 55 to +150 W ℃ A V Units V A Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient Typ.
-Max.
62.
5 Units ℃/W ▼ ▼ ▼ Rev.
A1 SSD2009A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS VGS(th) IGSS IDSS IDON RDS(on) gfs td(on)...


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