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Part Number
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IRL2910 |
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Manufacturer
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International Rectifier |
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Description
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HEXFET Power MOSFET |
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Published
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Oct 7, 2005 |
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Detailed Description
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PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l...
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Datasheet
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IRL2910
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Overview
PD - 91375B
IRL2910
HEXFET® Power MOSFET
Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
D
VDSS = 100V RDS(on) = 0.
026Ω
G
ID = 55A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universal...
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