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IRL2910SPbF

Part Number	IRL2910SPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 3, 2015
Detailed Description	PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistan...
Datasheet	IRL2910SPbF PDF File

Overview

PD - 95149 IRL2910S/LPbF l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low- AprobfsileoalupptleicaMtioanxs.
imum Ratings G Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.
026Ω ID = 55A S D 2 Pak T O -26 2 Max.
55 39 190 3.
8 200 1.
3 ± 16 520 29 20 5.
0 -55 to + 175 300 (1.
6mm from case ) Typ.
––– ––– Max.
0.
75 40 Units A W W W/°C V mJ A mJ V/ns °C Units °C/W 04/19/04 IRL2910S/LPbF Electrical Characteristics @ TJ = 25°C (unless other...

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IRL2910SPbF HEXFET Power MOSFET - International Rectifier

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