Part Number
|
IRFR9120N |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Oct 9, 2005 |
Detailed Description
|
PD - 9.1507A
PRELIMINARY
l l l l l l l
IRFR/U9120N
HEXFET® Power MOSFET
D
Ultra Low On-Resistance P-Channel Surface M...
|
Datasheet
|
IRFR9120N
|
Overview
PD - 9.
1507A
PRELIMINARY
l l l l l l l
IRFR/U9120N
HEXFET® Power MOSFET
D
Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -100V RDS(on) = 0.
48Ω
G S
ID = -6.
6A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed...
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