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IRFR9120N

International Rectifier
Part Number IRFR9120N
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 9, 2005
Detailed Description PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface M...
Datasheet PDF File IRFR9120N PDF File

IRFR9120N
IRFR9120N

Overview
PD - 9.
1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.
48Ω G S ID = -6.
6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D -P ak T O -2 52 A A I-P ak T O -25 1 A A ...


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