CEP06N5/CEB06N5
Oct.
2002
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
500V , 6.
6A , RDS(ON)=1Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
4 4
D
G
D G
G D S
S
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 500 Unit V V A A A W W/ C C
Ć 30
6.
6 20 6.
6 104 0.
83 ...