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CEP06N7

CET
Part Number CEP06N7
Manufacturer CET
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jan 24, 2016
Detailed Description CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP06N7 CEB06N...
Datasheet PDF File CEP06N7 PDF File

CEP06N7
CEP06N7

Overview
CEP06N7/CEB06N7 CEF06N7 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP06N7 CEB06N7 CEF06N7 VDSS 700V 700V 700V RDS(ON) 2Ω 2Ω 2Ω ID @VGS 6A 10V 6A 10V 6A d 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 6 4 24 150 1 6 4d 24 d 48 0.
3 Single Pulsed Avalanche Energy h EAS 125 Single Pulsed Avalanche Current h IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.
5 3.
1 65 Units V V A A A W W/ C mJ A C Units C/W C/W This is preliminary information on a new product in development now .
Details are subject to change without notice .
1 Rev 1.
2012.
May http://www.
cetsemi.
com CEP06N7/CEB06N7 CEF06N7 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Test Condition BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 3A Gate input resistance Rg f=1MHz,open Drain Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.
0 MHz...


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